sfh615aa/agb/agr/abm/abl/ay/ab document number 83672 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 i179060 1 2 4 3 e c a c pb p b -free e3 optocoupler, high reliability, 5300 v rms features ? low ctr degradation good ctr linearity depending on forward cur- rent isolation test voltage, 5300 v rms high collector-emitter voltage, v ceo = 70 v low saturation voltage fast switching times temperature stable low coupling capacitance end-stackable, .100 " (2.54 mm) spacing high common-mode interference immunity (unconnected base) lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 description the sfh615xxx features a large assortment of cur- rent transfer ratio, low coupling capacitance and high isolation voltage. these couplers have a gaas infra- red emitting diode emitter, which is optically coupled to a silicon planar photot ransistor detector, and is incorporated in a plastic dip-4 package. the coupling devices are designed for signal trans- mission between two electrically separated circuits. the couplers are end-stackable with 2.54 mm lead spacing. creepage and clearance distances of > 8 mm are achieved with option 6. this version complies with 60950 (din vde 0805) for reinforced insulation up to operation voltage of 400 v rms or dc. order information for additional information on t he available options refer to option information. part remarks sfh615aa ctr 50 - 600 %, dip-4 sfh615ab ctr 80 - 260 %, dip-4 sfh615abl ctr 200 - 600 %, dip-4 sfh615abm ctr 200 - 400 %, dip-4 sfh615agb ctr 100 - 600 %, dip-4 sfh615agr ctr 100 - 300 %, dip-4 sfh615ay ctr 50 - 150 %, dip-4 sfh615aa-x006 ctr 50 - 600 %, dip-4 400 mil (option 6) sfh615aa-x007 ctr 50 - 600 %, smd-4 (option 7) sfh615abm-x006 ctr 200 - 400 %, dip-4 400 mil (option 6) sfh615abm-x007 ctr 200 - 400 %, smd-4 (option 7) sfh615agb-x006 ctr 100 - 600 %, dip-4 400 mil (option 6) sfh615agb-x009 ctr 100 - 600 %, smd-4 (option 9) sfh615agr-x006 ctr 100 - 300 %, dip-4 400 mil (option 6) SFH615AGR-X007 ctr 100 - 300 %, smd-4 (option 7) sfh615ay-x006 ctr 50 - 150 %, dip-4 400 mil (option 6) sfh615ay-x008 ctr 50 - 150 %, smd-4 (option 8) sfh615ay-x009 ctr 50 - 150 %, smd-4 (option 9)
www.vishay.com 2 document number 83672 rev. 1.5, 26-oct-04 sfh615aa/agb/agr/abm/abl/ay/ab vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t p 1.0 ms i fsm 2.5 a power dissipation p diss 100 mw parameter test condition symbol value unit collector-emitter voltage v ec 70 v emitter-collector voltage v ce 7.0 v collector current i c 50 ma t p 1.0 ms i c 100 ma total power dissipation p diss 150 mw parameter test condition symbol value unit isolation test voltage between emitter and detector, refer to climate din 40046 part 2, nov.74 v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm insulation thickness between emitter and detector comparative tracking index per din iec 112/vdeo 303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature max. 10 s. dip soldering distance to seating plane 1.5 mm t sld 260 c
sfh615aa/agb/agr/abm/abl/ay/ab document number 83672 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 60 ma v f 1.25 1.65 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 13 pf thermal resistance r thja 750 k/w parameter test condition symbol min ty p. max unit collector-emitter capacitance v ce = 5 v, f = 1.0 mhz c ce 5.2 pf thermal resistance r thja 500 k/w parameter test condition part symbol min ty p. max unit collector-emitter saturation voltage i f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v coupling capacitance c c 0.4 pf collector-emitter leakage current v ceo = 10 v sfh615aa i ceo 10 100 na sfh615agb i ceo 10 100 na sfh615agr i ceo 10 100 na sfh615abm i ceo 10 100 na sfh615abl i ceo 10 100 na sfh615ay i ceo 10 100 na sfh615ab i ceo 10 100 na parameter test condition part symbol min ty p. max unit i c /i f i f = 5.0 ma, v ce = 5.0 v sfh615aa ctr 50 600 % sfh615agb ctr 100 600 % sfh615agr ctr 100 300 % sfh615abm ctr 200 400 % sfh615abl ctr 200 600 % sfh615ay ctr 50 150 % sfh615ab ctr 80 260 %
www.vishay.com 4 document number 83672 rev. 1.5, 26-oct-04 sfh615aa/agb/agr/abm/abl/ay/ab vishay semiconductors switching characteristics typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit turn-on time i f = 5.0 ma t on 2.0 s turn-off time i f = 5.0 ma t off 25 s figure 1. switching operation (with saturation) figure 2. current transfer ratio (typical) vs. temperature isfh615aa_01 1 ? v cc =5v 47 ? i f isfh615aa_02 i f = 10 ma, v cc = 5.0 v fiure 3.ransistorcapacitance (typ.)s.collectoremitter voltae fiure 4.permissilediodefo rardcurrents.amient emperature isfh615aa_03 f = 1.0 mhz isfh615aa_04
sfh615aa/agb/agr/abm/abl/ay/ab document number 83672 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 5. output characteristics (typ.) collector current vs. collector-emitter voltage figure 6. permissible pulse hand ling capability forward current vs. pulse width figure 7. diode forward voltage (typ.) vs. forward current isfh615aa_05 isfh615aa_06 pulse cycle d = parameter, isfh615aa_07 fiure 8.permissilepoerdi ssipations.emperature isfh615aa_08
www.vishay.com 6 document number 83672 rev. 1.5, 26-oct-04 sfh615aa/agb/agr/abm/abl/ay/ab vishay semiconductors package dimensions in inches (mm) i178027 .255 (6.48) .268 (6.81) 1 2 4 3 .179 (4.55) .190 (4.83) pin one id .030 (.76) .045 (1.14) 4 typ. .100 (2.54) .130 (3.30) .150 (3.81) .020 (.508 ) .035 (.89) 10 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .050 (1.27) iso method a .300 (7.62) ref. .375 (9.53) .395 (10.03) 0 (.102) 8 ( 249) p
sfh615aa/agb/agr/abm/abl/ay/ab document number 83672 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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